专利名称：Large-scale Fabrication of Vertically Aligned
ZnO Nanowire Arrays
发明人：Zhong Lin Wang,Youfan Hu,Yan Zhang,Chen
Xu,Guang Zhu
申请号：US13473867申请日：20120517
公开号：US20120293047A1公开日：20121122
专利附图：
摘要：A generator includes a substrate, a first electrode layer, a dense plurality ofvertically-aligned piezoelectric elongated nanostructures, an insulating layer and a
second electrode layer. The substrate has a top surface and the first electrode layer isdisposed on the top surface of the substrate. The dense plurality of vertically-alignedpiezoelectric elongated nanostructures extends from the first electrode layer. Each ofthe nanostructures has a top end. The insulating layer is disposed on the top ends of thenanostructures. The second electrode layer is disposed on the non-conductive layer andis spaced apart from the nanostructures.
申请人：Zhong Lin Wang,Youfan Hu,Yan Zhang,Chen Xu,Guang Zhu
地址：Marietta GA US,Atlanta GA US,Atlanta GA US,Atlanta GA US,Atlanta GA US
国籍：US,US,US,US,US
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